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october 2006 rev 5 1/12 12 STP62NS04Z n-channel clamped 12.5m ? - 62a - to-220 fully protected mesh overlay? power mosfet general features 100% avalanche tested low capacitance and gate charge 175 c maximum junction temperature description this fully clamped mosfet is produced by using the latest advanced company?s mesh overlay process which is based on a novel strip layout. the inherent benefits of the new technology coupled with the extra clam ping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. any other application requiring extra ruggedness is also recommended. applications switching application internal schematic diagram type v dss (@tjmax) r ds(on) i d STP62NS04Z clamped <0.015 ? 62a 1 2 3 to-220 www.st.com order codes part number marking package packaging STP62NS04Z p62ns04z to-220 tube
contents STP62NS04Z 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP62NS04Z electrical ratings 3/12 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) clamped v v gs gate-source voltage clamped v i d drain current (continuous) at t c = 25c 62 a i d drain current (continuous) at t c =100c 37.5 a i dg drain gate current (continuous) 50 i gs gate sourcecurrent (continuous) 50 i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 248 a p tot total dissipation at t c = 25c 110 w derating factor 0.74 w/c dv/dt (2) 2. i sd 40a, di/dt 100a/s, v dd v (br)dss , t j t jmax peak diode recovery voltage slope 8 v/ns e as (3) 3. starting t j = 25 o c, i d = 20a, v dd = 20v single pulse avalanche energy 500 mj v esd esd (hbm - c = 100pf, r = 1.5 k ? )8v t j t stg operating junction temperature storage temperature -55 to 175 c table 2. thermal data symbol parameter value unit r thjc thermal resistance junc tion-case max 1.36 c/w r thja thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STP62NS04Z 4/12 2 electrical characteristics (t case =25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 33 v i dss zero gate voltage drain current (v gs = 0) v ds = 16v 10 a i gss gate body leakage current (v ds = 0) v gs = 10v 10 a v gss gate-source breakdown voltage i gs = 100 a 18 v v gs(th) gate threshold voltage v ds = v gs , i d = 250a 24v r ds(on) static drain-source on resistance v gs = 10v, i d = 30a 12.5 15 m ? table 4. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15v, i d = 30a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v, f = 1 mhz, v gs = 0 1330 420 135 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20v, i d = 40a v gs =10v 34 10 11.5 47 nc nc nc table 5. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 20v, i d = 20a, r g =4.7 ?, v gs = 10v figure 13 on page 8 13 104 41 42 ns ns ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 30v, i d = 40a r g =4.7 ?, v gs = 10v figure 13 on page 8 30 54 90 ns ns ns
STP62NS04Z electrical characteristics 5/12 table 6. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 62 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 248 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 62a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 40a, di/dt = 100a/s, v dd = 20v, t j = 150c figure 15 on page 8 45 65 2.9 ns c a
electrical characteristics STP62NS04Z 6/12 2.1 electrical characterist ics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STP62NS04Z electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized b vdss vs temperature
test circuit STP62NS04Z 8/12 3 test circuit figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform
STP62NS04Z package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STP62NS04Z 10/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
STP62NS04Z revision history 11/12 5 revision history table 7. revision history date revision changes 21-jun-2004 2 preliminary datasheet 22-aug-2005 3 complete document with curves 21-jan-2006 4 new ecopak label 02-oct-2006 5 new template, no content change
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